Title:
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/228847
Kind Code:
A1
Abstract:
Provided are: a radiation-sensitive resin composition with which it is possible to form a resist film that is capable of exhibiting sensitivity, LWR performance, water repellency, and development defect inhibitory ability at satisfactory levels; and a pattern formation method. A radiation-sensitive resin composition comprising an onium salt compound represented by formula (1), a first resin comprising structural units that have an acid-dissociable group, a second resin that has a higher fluorine content than the first resin and has an acid-dissociable group, and a solvent. (In formula (1), R1 is a group comprising a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group comprising a divalent hetero atom-containing group between a carbon-carbon bond of said hydrocarbon group. Each of R2 and R3 is an independent hydrogen atom or a monovalent hydrocarbon group. When a plurality of R2s and a plurality of R3s exist, the plurality of R2s are the same as or different from each other and the plurality of R3s are the same as or different from each other. One of Rf11 and Rf12 is the fluorine atom and the other one thereof is the fluorine atom or a monovalent fluorinated hydrocarbon group. When a plurality of Rf11s and a plurality of Rf12s exist, the plurality of Rf11s are the same as or different from each other and the plurality of Rf12s are the same as or different from each other. m1 is an integer of 1-3. m2 is an integer of 0-8. Z1 + is a monovalent radiation-sensitive onium cation.)
Inventors:
NEMOTO RYUICHI (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
Application Number:
PCT/JP2023/018530
Publication Date:
November 30, 2023
Filing Date:
May 18, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; G03F7/039; G03F7/20
Foreign References:
| JP2008007410A | 2008-01-17 | |||
| JP2010191015A | 2010-09-02 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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