Title:
RADIO FREQUENCY AMPLIFICATION CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/223793
Kind Code:
A1
Abstract:
This radio frequency amplification circuit comprises: an amplification transistor that is made from a compound semiconductor and that has a base to which a radio frequency signal is supplied and a collector that outputs the radio frequency signal as amplified; a first transistor that is made from the compound semiconductor and that has a base to which a first bias is supplied and an emitter that is electrically connected to the base of the amplification transistor for supplying a second bias to the base of the amplification transistor; and a Schottky-barrier diode that has an anode electrically connected to the base of the first transistor and a cathode electrically connected to the emitter of the first transistor.
Inventors:
TSUTSUI TAKAYUKI (JP)
TAKAHASHI SHINNOSUKE (JP)
TAKAHASHI SHINNOSUKE (JP)
Application Number:
PCT/JP2023/016501
Publication Date:
November 23, 2023
Filing Date:
April 26, 2023
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03F1/30; H03F1/32; H03F3/24
Foreign References:
| JP2016116022A | 2016-06-23 | |||
| JP2002289835A | 2002-10-04 | |||
| JP2022036687A | 2022-03-08 | |||
| JP2005223437A | 2005-08-18 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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