Title:
RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING RUTHENIUM COMPLEX AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION
Document Type and Number:
WIPO Patent Application WO/2020/116364
Kind Code:
A1
Abstract:
The present invention relates to a raw material for chemical vapor deposition, the raw material comprising a ruthenium complex represented by chemical formula 1, wherein the raw material is for producing, through a chemical vapor deposition method, a ruthenium thin film or a ruthenium compound thin film. In chemical formula 1, a ligand L1 and a ligand L2 which are coordinated to ruthenium are represented by chemical formula 2. A raw material for chemical vapor deposition according to the present invention is capable of producing a high-quality thin film without using a reaction gas which includes an oxygen atom. [Chemical formula 1] RuL1L2 [Chemical formula 2] (the substituents R1-R12 of ligands L1 and L2 are each independently any one among a hydrogen atom, and a linear or branched alkyl group having 1-4 carbon atom.)
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Inventors:
HARADA RYOSUKE (JP)
IWAI TERUHISA (JP)
SHIGETOMI TOSHIYUKI (JP)
OOTAKE SHIGEYUKI (JP)
LEE SEUNG-JOON (JP)
IWAI TERUHISA (JP)
SHIGETOMI TOSHIYUKI (JP)
OOTAKE SHIGEYUKI (JP)
LEE SEUNG-JOON (JP)
Application Number:
PCT/JP2019/046935
Publication Date:
June 11, 2020
Filing Date:
December 02, 2019
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C16/18; H01L21/285; C07F15/00
Foreign References:
| KR20100060482A | 2010-06-07 | |||
| JP2013501714A | 2013-01-17 | |||
| JP2017524729A | 2017-08-31 |
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
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