Title:
RAW MATERIAL FOR OBTAINING ABRASIVE GRAINS AND SELECTION METHOD THEREFOR, PRODUCTION METHOD FOR ABRASIVE GRAINS, PRODUCTION METHOD FOR POLISHING LIQUID, POLISHING METHOD, PRODUCTION METHOD FOR COMPONENT, AND PRODUCTION METHOD FOR SEMICONDUCTOR COMPONENT
Document Type and Number:
WIPO Patent Application WO/2024/089923
Kind Code:
A1
Abstract:
Provided is a selection method for a raw material for obtaining abrasive grains, wherein the raw material contains cerium, and the raw material is selected on the basis of a peak top temperature in a differential curve of a thermogravimetric curve obtained by thermogravimetric analysis of the raw material. The present invention also provides a raw material for obtaining abrasive grains, said raw material containing cerium and having a peak top temperature of 300°C or higher in a differential curve of a thermogravimetric curve obtained by thermogravimetric analysis of the raw material. A production method for abrasive grains, wherein the raw material is pulverized. A production method for a polishing liquid, wherein the abrasive grains obtained by the aforementioned production method for abrasive grains are mixed with water. A polishing method for polishing a member to be polished by using the polishing liquid obtained by the aforementioned production method for a polishing liquid.
Inventors:
KAGESAWA KOICHI (JP)
LEE SANGCHUL (JP)
KUBO HIROMU (JP)
LEE SANGCHUL (JP)
KUBO HIROMU (JP)
Application Number:
PCT/JP2023/017469
Publication Date:
May 02, 2024
Filing Date:
May 09, 2023
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
C09K3/14; C01F17/235; H01L21/304
Domestic Patent References:
| WO2007100093A1 | 2007-09-07 |
Foreign References:
| JP2007154156A | 2007-06-21 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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