READ-WRITE CIRCUIT, READ-WRITE METHOD, AND FERROELECTRIC MEMORY

WIPO Patent Application WO/2023/169075

A1

The present application relates to the technical field of data storage, and particularly to a read-write circuit, a read-write method, and a ferroelectric memory. The read-write circuit comprises: a sensitive amplifier, which is coupled to a first bit line of a first ferroelectric memory cell and a first reference bit line; a first voltage switching circuit, which is connected to the sensitive amplifier and is used for outputting a first voltage or a second voltage to the sensitive amplifier; and a second voltage switching circuit, which is connected to the sensitive amplifier and is used for outputting a third voltage or a fourth voltage to the sensitive amplifier, wherein the four voltages have the following relationship: the first voltage > the second voltage > the third voltage > the fourth voltage. When the voltage on the first bit line is higher than the voltage on the first reference bit line, the sensitive amplifier is used for outputting the first voltage or the second voltage to the first bit line, and outputting the third voltage or the fourth voltage to the first reference bit line. By means of the read-write circuit, the power consumption and cost of a ferroelectric memory can be reduced.

XU LIANG (CN)
BU SITONG (CN)
FANG YICHEN (CN)
LIU XIAOZHEN (CN)
XU JEFFREY JUNHAO (CN)

PCT/CN2023/070639

September 14, 2023

January 05, 2023

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HUAWEI TECH CO LTD (CN)

G11C11/22

WO2021244055A1

2021-12-09

CN113808639A	2021-12-17
US20190206474A1	2019-07-04
CN112992201A	2021-06-18
CN112885386A	2021-06-01

E-TONE INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)

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