Title:
READ-WRITE CIRCUIT AND READ-WRITE METHOD FOR MEMRISTOR
Document Type and Number:
WIPO Patent Application WO/2021/051548
Kind Code:
A1
Abstract:
Disclosed are a read-write circuit and a read-write method for a memristor. The read-write circuit mainly comprises a read circuit and a write circuit, and the write circuit comprises: a first voltage follower circuit and a first voltage selector that are electrically connected to a memristor storage array. The read-write circuit further comprises: a second voltage follower circuit and a second voltage selector that are electrically connected to the memristor storage array. By means of selecting voltage stabilization following by the foregoing selectors during bipolar writing while setting variable resistor selection access on the read circuit, an actual read-out voltage and an output voltage through a reference resistor under the same read voltage are inputted into a differential amplifier to obtain read-out data. In the read-write circuit and the read-write method implemented according to the present invention, the read-write circuit is simplified, and high-speed and stable read-write voltages may be provided. Moreover, the random fluctuation of the memristor is taken into consideration in the design of the read-out circuit, which improves the stability of a memristor circuit, and the read circuit is also suitable for binary and multi-value memristors.
Inventors:
WANG XINGSHENG (CN)
HUANG ENMING (CN)
MIAO XIANGSHUI (CN)
HUANG ENMING (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2019/117419
Publication Date:
March 25, 2021
Filing Date:
November 12, 2019
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
G11C13/00
Domestic Patent References:
| WO2015005920A1 | 2015-01-15 |
Foreign References:
| CN105825885A | 2016-08-03 | |||
| CN103268772A | 2013-08-28 | |||
| CN106920568A | 2017-07-04 |
Attorney, Agent or Firm:
WUHAN DONGYU PATENT AGENCY (CN)
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