Title:
RED LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING RED LIGHT-EMITTING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/128643
Kind Code:
A1
Abstract:
Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the red light-emitting semiconductor element. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element.
Inventors:
NISHIKAWA ATSUSHI (JP)
FUJIWARA YASUFUMI (JP)
TERAI YOSHIKAZU (JP)
KAWASAKI TAKASHI (JP)
FURUKAWA NAOKI (JP)
FUJIWARA YASUFUMI (JP)
TERAI YOSHIKAZU (JP)
KAWASAKI TAKASHI (JP)
FURUKAWA NAOKI (JP)
Application Number:
PCT/JP2010/057599
Publication Date:
November 11, 2010
Filing Date:
April 28, 2010
Export Citation:
Assignee:
OSAKA UNIVERSIY (JP)
NISHIKAWA ATSUSHI (JP)
FUJIWARA YASUFUMI (JP)
TERAI YOSHIKAZU (JP)
KAWASAKI TAKASHI (JP)
FURUKAWA NAOKI (JP)
NISHIKAWA ATSUSHI (JP)
FUJIWARA YASUFUMI (JP)
TERAI YOSHIKAZU (JP)
KAWASAKI TAKASHI (JP)
FURUKAWA NAOKI (JP)
International Classes:
H01L33/32; H01L21/205
Foreign References:
| JP2000091703A | 2000-03-31 | |||
| JP2004288757A | 2004-10-14 |
Other References:
TAKASHI KAWASAKI ET AL.: "Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy", PHYSICA STATUS SOLIDI C, 21 April 2010 (2010-04-21)
ATSUSHI NISHIKAWA ET AL.: "Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection", APPLIED PHYSICS EXPRESS, vol. 2, 26 June 2009 (2009-06-26), pages 071004-1 - 071004-3
ATSUSHI NISHIKAWA ET AL.: "Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection", APPLIED PHYSICS EXPRESS, vol. 2, 26 June 2009 (2009-06-26), pages 071004-1 - 071004-3
Attorney, Agent or Firm:
JODAI, Tetsuji et al. (JP)
Tetsuji Ueshiro (JP)
Tetsuji Ueshiro (JP)
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