WAGENSOHNER KONRAD (DE)
ROMMEL MARKUS (DE)
EP2557472B1 | 2017-04-05 | |||
US8072259B1 | 2011-12-06 |
CLAIMS What is claimed is: 1. A circuit, comprising: a current generator coupled to a first voltage source and configured to: generate a first current, and mirror the first current as a second current and a third current; a proportional to absolute temperature (“PTAT”) voltage generator coupled to the current generator and a second voltage source, the PTAT voltage generator configured to: receive the second current from the current generator, and generate a third voltage based on the second current; and a complementary to absolute temperature (“CTAT”) voltage generator coupled to the current generator and to the PTAT voltage generator, the CTAT voltage generator configured to: receive the first current and the third current from the current generator, and generate a reference voltage based on the first current, the second current, and the third voltage. 2. The circuit of claim 1, wherein: the current generator includes a first field effect transistor (FET), a second FET, and a third FET, the first FET having a first gate, a first source, and a first drain, the second FET having a second gate, a second source and a second drain, and the third FET having a third gate, a third source, and a third drain; the first FET configured to generate the first current; the second FET and the third FET configured to mirror the first current as the second current and the third current, respectively; the first source, the second source, and the third source coupled together and to the first voltage source; the first gate, the second gate, and the third gate connected to one another and the first drain; the second drain is connected to a FET in the PTAT voltage generator; and the first drain and the third drain are connected to a transistor in the CTAT voltage generator. 3. The circuit of claim 1, wherein: the PTAT voltage generator includes a first field effect transistor (FET) and a second FET; the first FET includes: a first drain coupled to a FET in the current generator, a first gate coupled to the first drain, and a first source coupled to a FET in the CTAT voltage generator; the second FET includes: a second drain coupled to the first source and the FET in the CTAT voltage generator, a second gate coupled to the first drain, the first gate, and the FET in the current generator, and a second source coupled to the second voltage source; and the third voltage is a Voltage proportional to absolute temperature (“VPTAT”). 4. The circuit of claim 1, wherein: the CTAT voltage generator includes a first field effect transistor (FET), a second FET, a third FET, and a resistor; the first FET includes: a first drain coupled to a FET in the current generator, a first gate coupled to the first drain and another FET in the current generator, and a first source to the second FET; the second FET includes: a second drain coupled to the first gate and the FET in the current generator, a second gate coupled to the second drain, the first gate, and the another FET in the current generator, and a second source coupled to a FET in the PTAT voltage generator; the third FET includes: a third drain coupled to the first drain, a third gate coupled to the first gate, the second drain, the second gate, and the another FET in the current generator, and a third source coupled to a first resistor terminal of the resistor; the resistor includes the first resistor terminal coupled to the third source and a second resistor terminal coupled to the second source and the FET of the PTAT voltage generator; and the reference voltage is a voltage at the third drain. 5. The circuit of claim 4, wherein: the third FET includes a first threshold voltage and the first FET includes a second threshold voltage, the first threshold voltage being higher than the second threshold voltage. 6. The circuit of claim 4, wherein: the circuit is configured to keep the reference voltage within +/- 10 parts per million (“ppm”) from a target voltage when the circuit operates within a temperature range of -55 degrees Celsius to 180 degrees Celsius, inclusive. 7. The circuit of claim 1, wherein: the CTAT voltage generator includes a first field effect transistor (FET), a second FET, a third FET, a resistor, and a trim controller; the first FET includes: a first drain coupled to a FET in the current generator, a first gate coupled to the first drain and another FET in the current generator, and a first source coupled to the trim controller via a first trim terminal; the second FET includes: a second drain coupled to the first gate and the FET in the current generator, a second gate coupled to the second drain, the first gate, and the another FET in the current generator, and a second source coupled to a FET in the PTAT voltage generator; a third FET includes: a third drain coupled to a second trim terminal of the trim controller , a third gate coupled to the first gate, the second drain, the second gate, and the another FET in the current generator, and a third source coupled a first resistor terminal of the resistor; the resistor includes a first resistor terminal coupled to the third source and a second resistor terminal coupled to the second source and the FET of the PTAT voltage generator; the trim controller includes the first trim terminal coupled to the first source, the second trim terminal coupled to the third drain, and a third terminal configured to output the reference voltage, the trim controller being configured to adjust the reference voltage; and the circuit is configured to keep the reference voltage within +/- 10 parts per million (“ppm”) from a target voltage when the circuit is within a temperature range. 8. A circuit, comprising: a first transistor including: a first current terminal coupled to a first voltage source, a first control terminal, and a second current terminal coupled to the first control terminal; a second transistor including: a third current terminal coupled to the second current terminal, a second control terminal, and a fourth current terminal; and a third transistor including: a fifth current terminal coupled to the fourth current terminal, a third control terminal coupled to the second control terminal, and a sixth current terminal, wherein a voltage at the fifth current terminal is a reference voltage, and the circuit is configured to keep the reference voltage within +/- 10 parts per million (“ppm”) from a target voltage when the circuit is within a temperature range. 9. The circuit of claim 8, wherein: a voltage at the second control terminal is a voltage complementary to absolute temperature (“VCTAT”). 10. The circuit of claim 9, further comprising: a fourth transistor including: a seventh current terminal coupled to the first voltage source, a fourth control terminal coupled to the first control terminal, and an eight current terminal; a fifth transistor including: a nineth current terminal coupled to the first voltage source, a fifth control terminal coupled to the first control terminal and the fourth control terminal, and a tenth current terminal, wherein the first transistor is configured to generate a first current, and wherein the fourth transistor and the fifth transistor are configured to mirror the first current into a second current and a third current, respectively. 11. The circuit of claim 10, wherein: a sixth transistor including: an eleventh current terminal coupled to the eighth current terminal, a sixth control terminal coupled to the eleventh current terminal and the eighth current terminal, and a twelfth current terminal; and a seventh transistor including: a thirteenth current terminal coupled to the twelfth current terminal, a seventh control terminal coupled to the sixth control, the eleventh current terminal, and the eighth current terminal, and a fourteenth current terminal coupled to a second voltage source, a voltage at the thirteenth current terminal is a voltage proportional to absolute temperature (“VPTAT”). 12. The circuit of claim 11, wherein: the reference voltage has a temperature coefficient that is approximately zero within a particular temperature range. 13. The circuit of claim 11, wherein: an eighth transistor including: a fifteenth current terminal coupled to the second control terminal, the third control terminal, and the tenth current terminal, an eighth control terminal coupled to the fifteenth current, the second control terminal, the third control terminal, and the tenth current terminal, and a sixteenth current terminal coupled to the twelfth current terminal, and the thirteenth current terminal; and a resistor including: a first resistor terminal coupled to the fourth current terminal, and a second resistor terminal coupled to the sixteenth current terminal, the twelfth current terminal, and the thirteenth current terminal. 14. The circuit of claim 13, wherein: the second transistor includes a first threshold voltage and the third transistor includes a second threshold voltage, the first threshold voltage being higher than the second threshold voltage. 15. A circuit, comprising: a first transistor including: a first current terminal configured to receive a first current, a first control terminal including a voltage complementary to absolute temperature (“VCTAT”) including a first temperature coefficient, and a second current terminal; a second transistor including: a third current terminal coupled to the second current terminal, a second control terminal coupled to the first control terminal, and a fourth current terminal; and a resistor including: a first resistor terminal coupled to the fourth current terminal, and a second resistor terminal including a voltage proportional to absolute temperature (“VPTAT”) including a second temperature coefficient, wherein a voltage at the third current terminal is a reference voltage, and the circuit is configured to keep the reference voltage within +/- 10 parts per million (“ppm”) from a target voltage when the circuit operates within a particular temperature range. 16. The circuit of claim 15, wherein: the first transistor includes a first threshold voltage and the second transistor includes a second threshold voltage, the first threshold voltage being higher than the second threshold voltage. 17. The circuit of claim 15, wherein: the reference voltage has a temperature coefficient that is approximately zero within the particular temperature range, and the temperature coefficient is approximately zero based on a combination of the first temperature coefficient and the second temperature coefficient. |
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