Title:
REFLECTION-TYPE MASK, REFLECTION-TYPE MASK BLANK, AND METHOD FOR MANUFACTURING REFLECTION-TYPE MASK
Document Type and Number:
WIPO Patent Application WO/2022/050156
Kind Code:
A1
Abstract:
The present invention pertains to a reflection-type mask blank (10) obtained by forming, on a substrate (11) in the following order, a multilayer reflection film (12) for reflecting EUV light, a phase shift film (14) for shifting a phase of EUV light, and a semi-light shielding film (15) for providing shielding from EUV light. The reflection-type mask blank is characterized in that the reflectance is less than 7% at a wavelength of 13.5 nm when a surface of the semi-light shielding film is irradiated with EUV light, and that the reflectance is not less than 9% but less than 15% at a wavelength of 13.5 nm when a surface of the phase shift film is irradiated with EUV light.
Inventors:
TANABE HIROYOSHI (JP)
Application Number:
PCT/JP2021/031257
Publication Date:
March 10, 2022
Filing Date:
August 25, 2021
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F1/32; G03F1/80
Domestic Patent References:
| WO2020137928A1 | 2020-07-02 | |||
| WO2010007955A1 | 2010-01-21 | |||
| WO2019225737A1 | 2019-11-28 |
Foreign References:
| JP2009212220A | 2009-09-17 | |||
| JP2014168019A | 2014-09-11 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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