Title:
REFLECTION-TYPE MASK BLANK, METHOD FOR PRODUCING REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK, AND METHOD FOR PRODUCING REFLECTION-TYPE MASK
Document Type and Number:
WIPO Patent Application WO/2024/014207
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a reflection-type mask blank for which machining error is small when machining by charged particle radiation is carried out. A reflection-type mask blank (10a) includes, in the given order, a substrate (11), a multilayer reflection film (12) that reflects EUV light, a protective film (13), and an absorptive body film (14) having a monolayer structure or a multilayer structure. The reflection-type mask blank is configured: so that any one of layers located between the protective layer and the outermost surface layer which is of the reflection-type mask blank (10a) and which is on the outermost side and on the side opposite the substrate (11), is an insulation layer having a sheet resistance of 1.0×103 Ω/sq. or greater; and so that the inter-layer electrical resistance between the protective layer (13) and the surface of the outermost surface layer, the surface being on the side opposite the substrate (11) is 100 kΩ or less.
Inventors:
ITO HIROAKI (JP)
AKAGI DAIJIRO (JP)
FUDETANI TAIGA (JP)
AKAGI DAIJIRO (JP)
FUDETANI TAIGA (JP)
Application Number:
PCT/JP2023/021774
Publication Date:
January 18, 2024
Filing Date:
June 12, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/40; C23C14/06; G03F1/24; G03F1/54
Domestic Patent References:
| WO2006033442A1 | 2006-03-30 |
Foreign References:
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Attorney, Agent or Firm:
T.S. PARTNERS et al. (JP)
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