Title:
REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/048387
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a reflection-type mask blank that prevents electrostatic damage from occurring, while suppressing CD changes during a dry etching process. A reflection-type mask blank 100 comprises a multilayer reflective film 2, an absorber film 4, and an etching mask film 6, in this order. The absorber film 4 includes a buffer layer 42 and an absorption layer 44, and the etching mask film 6 contains an element X and oxygen. In the etching mask film 6, if an oxygen concentration ratio obtained by dividing the oxygen content by the total content of the element X and oxygen is defined, the oxygen concentration ratio on the absorption layer side of the etching mask film 6 is higher than the oxygen concentration ratio at the center of the thickness of the etching mask film 6, and the element X includes at least one selected from tantalum and silicon.
Inventors:
TANIGUCHI KAZUTAKE (JP)
NAKAGAWA MASANORI (JP)
NAKAGAWA MASANORI (JP)
Application Number:
PCT/JP2023/030283
Publication Date:
March 07, 2024
Filing Date:
August 23, 2023
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/54; G03F1/80; G03F7/20
Domestic Patent References:
| WO2020175354A1 | 2020-09-03 |
Foreign References:
| JP2013057739A | 2013-03-28 | |||
| JP2019091097A | 2019-06-13 | |||
| JP2014053576A | 2014-03-20 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
Download PDF: