Title:
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
Document Type and Number:
WIPO Patent Application WO/2020/235612
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing an EUV mask blank provided with a hard mask layer enabling a sufficient etching speed in a dry etching process having a sufficiently high etching selection ratio under the etching condition of an absorbing layer and using a gas mixture of a chlorine-based gas and oxygen gas. The reflective mask blank for EUV lithography according to the present invention has a reflection layer (12) that reflects EUV light, a protective layer (13) that contains ruthenium (Ru), an absorbing layer (14) that contains tantalum (Ta) and absorbs the EUV light, and a hard mask layer (16) formed on a substrate (11) in this order, wherein the hard mask layer (16) contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O) and has a film density of 3.00-5.40 g/cm3.
Inventors:
KAWAHARA HIROTOMO (JP)
HANEKAWA HIROSHI (JP)
UNO TOSHIYUKI (JP)
AKITA MASAFUMI (JP)
HANEKAWA HIROSHI (JP)
UNO TOSHIYUKI (JP)
AKITA MASAFUMI (JP)
Application Number:
PCT/JP2020/020016
Publication Date:
November 26, 2020
Filing Date:
May 20, 2020
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F7/20
Domestic Patent References:
| WO2019078206A1 | 2019-04-25 |
Foreign References:
| JP2005302897A | 2005-10-27 | |||
| JP2019035929A | 2019-03-07 | |||
| JP2012212706A | 2012-11-01 | |||
| JP2014212171A | 2014-11-13 | |||
| JP2015222783A | 2015-12-10 | |||
| JP2018044979A | 2018-03-22 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
Download PDF:
Previous Patent: SYNCHRONOUS ELECTRIC MOTOR
Next Patent: MESH-LIKE HOOK FASTENER AND DYEING METHOD THEREFOR
Next Patent: MESH-LIKE HOOK FASTENER AND DYEING METHOD THEREFOR