Title:
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD FOR MANUFACTURING MASK BLANK AND MASK
Document Type and Number:
WIPO Patent Application WO/2021/132111
Kind Code:
A1
Abstract:
Provided is an EUV mask blank comprising: a phase shift layer (14) using an Ru-based material; and an etching mask film (15) for dry etching using oxygen gas or a mixed gas of oxygen gas and halogen gas as the etching gas, the etching mask film (15) exhibiting etching resistance and being removable without a dry etching process. A reflective mask blank (1) for EUV lithography, the reflective mask blank (1) comprising, in the stated order, a substrate (11), a multilayer reflective film (12) that reflects EUV light, the phase shift film (14), which shifts the phase of the EUV light, and the etching mask film (15), wherein the reflective mask blank is characterized in that the phase shift film (14) comprises a ruthenium-based material having ruthenium as a main component, the film thickness of the phase shift film (14) is 20 nm or more, and the etching mask film (15) can be removed with a cleaning fluid using an acid or a base.
Inventors:
AKAGI DAIJIRO (JP)
KAWAHARA HIROTOMO (JP)
TANABE HIROYOSHI (JP)
UNO TOSHIYUKI (JP)
KAWAHARA HIROTOMO (JP)
TANABE HIROYOSHI (JP)
UNO TOSHIYUKI (JP)
Application Number:
PCT/JP2020/047574
Publication Date:
July 01, 2021
Filing Date:
December 18, 2020
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F7/20
Domestic Patent References:
| WO2019225736A1 | 2019-11-28 |
Foreign References:
| JP2018146945A | 2018-09-20 | |||
| JP2010080659A | 2010-04-08 | |||
| JP2017181571A | 2017-10-05 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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