Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND MANUFACTURING METHODS FOR REFLECTIVE MASK AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/085026
Kind Code:
A1
Abstract:
Provided is a reflective mask blank which can reduce the diffusion of boron (B), contained in an absorber film, into an etching mask film. This reflective mask blank contains a substrate, a multilayer reflective film, an absorber film including a first absorption layer and a second absorption layer, and an etching mask film, wherein: the first absorption layer contains boron (B); the content of boron (B) in the second absorption layer is less than the content of boron (B) in the first absorption layer; the etching mask film contains a metal (M); and in the content profile of the boron (B) and the metal (M) with respect to sputtering time, as obtained by sputtering the etching mask film and at least a portion of the second absorption layer and the first absorption layer in the film thickness direction, the content profile of the boron (B) satisfies a predetermined relationship.
Inventors:
KISHIDA HIBIKI (JP)
NAKAGAWA MASANORI (JP)
NAKAGAWA MASANORI (JP)
Application Number:
PCT/JP2023/036797
Publication Date:
April 25, 2024
Filing Date:
October 10, 2023
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2020256064A1 | 2020-12-24 |
Foreign References:
| JP2005347777A | 2005-12-15 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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