Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND PRODUCTION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/159785
Kind Code:
A1
Abstract:
Provided are: a reflective mask blank which is capable of reducing a shadowing effect of extreme ultraviolet (EUV) lithography, and which is capable of forming fine patterns; and a reflective mask. As a result, a semiconductor device can be produced with a stable, high transfer accuracy. The reflective mask blank has a multilayer reflective film and an absorbent film which are provided in that order on a substrate. The absorbent film comprises a material including an amorphous metal which includes at least one element from among cobalt (Co) and nickel (Ni).
Inventors:
IKEBE YOHEI (JP)
HORIKAWA JUNICHI (JP)
ONOUE TAKAHIRO (JP)
KATAOKA MIZUKI (JP)
HORIKAWA JUNICHI (JP)
ONOUE TAKAHIRO (JP)
KATAOKA MIZUKI (JP)
Application Number:
PCT/JP2018/007897
Publication Date:
September 07, 2018
Filing Date:
March 01, 2018
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2006030627A1 | 2006-03-23 | |||
| WO2010074125A1 | 2010-07-01 |
Foreign References:
| JP2015073013A | 2015-04-16 | |||
| US20160223896A1 | 2016-08-04 | |||
| JP2004006798A | 2004-01-08 | |||
| US20100167181A1 | 2010-07-01 | |||
| US20150212402A1 | 2015-07-30 | |||
| JPH07114173A | 1995-05-02 | |||
| JP2013532381A | 2013-08-15 | |||
| JP2008539573A | 2008-11-13 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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