Title:
REFLECTIVE MASK BLANK AND REFLECTIVE MASK
Document Type and Number:
WIPO Patent Application WO/2021/085382
Kind Code:
A1
Abstract:
This reflective mask blank comprises a reflection layer for reflecting EUV light, a protection layer for protecting the reflection layer, and an absorption layer for absorbing the EUV light in this order on a substrate, and is characterized in that the reflectance at a wavelength of 13.53 nm of the absorption layer is 2.5-10%, and the film thickness d of the absorption layer satisfies the relationship of expression (A). Here, integer i is 0 or 1, and dMAX is expression (B). In the above expression, the refractive index of the absorption layer is denoted by n, and the absorption coefficient thereof is denoted by k. INT(x) is a function that returns an integer value obtained by dropping a fractional portion.
Inventors:
TANABE HIROYOSHI (JP)
HANEKAWA HIROSHI (JP)
UNO TOSHIYUKI (JP)
HANEKAWA HIROSHI (JP)
UNO TOSHIYUKI (JP)
Application Number:
PCT/JP2020/040115
Publication Date:
May 06, 2021
Filing Date:
October 26, 2020
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24; G03F1/26; G03F7/20
Domestic Patent References:
| WO2017090485A1 | 2017-06-01 | |||
| WO2018135467A1 | 2018-07-26 | |||
| WO2018159392A1 | 2018-09-07 |
Foreign References:
| JP2010067757A | 2010-03-25 | |||
| JP2018141969A | 2018-09-13 | |||
| JPH07114173A | 1995-05-02 |
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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