Title:
REFLECTIVE MASK FOR EUV LITHOGRAPHY
Document Type and Number:
WIPO Patent Application WO/2011/073441
Kind Code:
A3
Abstract:
To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography, comprising a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured in such a manner that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.
Inventors:
KAMENOV VLADIMIR (DE)
MIGURA SASCHA (DE)
MIGURA SASCHA (DE)
Application Number:
PCT/EP2010/070171
Publication Date:
October 06, 2011
Filing Date:
December 17, 2010
Export Citation:
Assignee:
ZEISS CARL SMT GMBH (DE)
KAMENOV VLADIMIR (DE)
MIGURA SASCHA (DE)
KAMENOV VLADIMIR (DE)
MIGURA SASCHA (DE)
International Classes:
G03F1/24; G03F7/20
Foreign References:
| US20050271957A1 | 2005-12-08 | |||
| DE10155711A1 | 2003-05-22 | |||
| US7382527B2 | 2008-06-03 |
Other References:
KUHLMANN T ET AL: "Design and fabrication of broadband EUV multilayer mirrors", PROCEEDINGS OF SPIE, SPIE, USA, vol. 4688, 1 January 2002 (2002-01-01), pages 509 - 515, XP002521593, ISSN: 0277-786X, Retrieved from the Internet [retrieved on 20020101], DOI: DOI:10.1117/12.472327
Attorney, Agent or Firm:
WERNER, Anne-Estelle (Münster, DE)
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