REMOVAL OF CMP AND POST-CMP RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS

Title:

REMOVAL OF CMP AND POST-CMP RESIDUE FROM SEMICONDUCTORS USING SUPERCRITICAL CARBON DIOXIDE PROCESS

Document Type and Number:

WIPO Patent Application WO2004085491

Kind Code:

A3

Abstract:

A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Inventors:

MULLEE WILLIAM H
DE LEEUWE MARC
ROBERSON GLENN A JR
PALMER BENTLEY J

Application Number:

PCT/US2004/009223

Publication Date:

November 04, 2004

Filing Date:

March 24, 2004

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (US)

International Classes:

B08B3/12; B08B7/00; C11D11/00; H01L21/02; H01L21/306; (IPC1-7): H01L21/302; H01L21/461; C25F5/00; C03C23/00; C23G1/00; B08B3/00; B08B5/00

Foreign References:

US4944837A	1990-07-31
US6021791A	2000-02-08
US5679169A	1997-10-21

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