RESIDUE REMOVING LIQUID COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME

WIPO Patent Application WO/2010/016350

A1

Disclosed is a residue removing liquid composition which can completely remove a resist residue and a residue derived from titanium (Ti), which remain after dry etching and ashing performed for formation of a via hole during a production process of a semiconductor substrate which has metal wiring composed of aluminum (Al) or an aluminum alloy, at a low temperature in a short time, without corroding members such as an interlayer insulating material and a wiring material.  Also disclosed is a method for cleaning a semiconductor element using the residue removing liquid composition. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a compound having a carbon-carbon triple bond, (D) a water-soluble organic solvent and (E) water.  The contents of the components (A), (C), (D) and (E) in the residue removing liquid composition are respectively 0.005-2% by mass, 0.1-10% by mass, 60-75% by mass and 5-38% by mass, and the component (B) is contained in an amount of 0.9-1.5 times the (molar) amount of the component (A).

JP2512631	[Title of the Invention] A semiconductor wafer provided with an outer peripheral reinforcing member, a manufacturing method and an apparatus thereof.
JP2004255258	ULTRASONIC CLEANER AND ULTRASONIC CLEANING METHOD
JP7426260	Adhesive tape

KAMATA KYOKO (JP)
TANAKA KEIICHI (JP)
MATSUNAGA HIROSHI (JP)

PCT/JP2009/062335

February 11, 2010

July 07, 2009

Click for automatic bibliography generation  

MITSUBISHI GAS CHEMICAL CO (JP)
KAMATA KYOKO (JP)
TANAKA KEIICHI (JP)
MATSUNAGA HIROSHI (JP)

H01L21/304; H01L21/027

JP2006251491A

2006-09-21

OHTANI, Tamotsu (JP)
Tamotsu Otani (JP)

View/Download PDF      PDF Help

Previous Patent: BALL AND ENTERTAINMENT SYSTEM

Next Patent: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE