RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME

Title:

RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME

Document Type and Number:

WIPO Patent Application WO/2024/014329

Kind Code:

A1

Abstract:

The present invention provides a resist composition which contains a resin (A) and a solvent (B) containing a compound (B1) represented by general formula (b-1), and which contains an active ingredient in an amount of 45 mass% or less with respect to the total amount of the resist composition. (In the above formula (b-1), R0 is a C1–C10 alkyl group, a C6–C10 aryl group, or a C1–C10 acyl group, and R1 is a hydrogen atom or a C1–C10 alkyl group.)

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Inventors:

OKADA TAKUMI (JP)
HOSHINO RYOSUKE (JP)
SATO HIDEYUKI (JP)
KATAGIRI MASAYUKI (JP)
SUZUKI SHU (JP)
ECHIGO MASATOSHI (JP)

Application Number:

PCT/JP2023/024543

Publication Date:

January 18, 2024

Filing Date:

July 03, 2023

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Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)

International Classes:

G03F7/004; G03F7/023; G03F7/039

Domestic Patent References:

WO2020004464A1

2020-01-02

Foreign References:

JPS62123444A	1987-06-04
JP2017120403A	2017-07-06

Attorney, Agent or Firm:

KOBAYASHI Hiroshi et al. (JP)

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