Title:
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER COMPOUND
Document Type and Number:
WIPO Patent Application WO/2024/075535
Kind Code:
A1
Abstract:
In the present invention, there is employed a resist composition having, as a base resin, a polymer compound that has constituent units derived from a compound expressed by general formula (a0−m). In the formula, W is a polymerizable-group-containing group; RAr1 and RAr2 are aromatic groups; R01 and R2 are iodinated alkyl groups, iodine atoms, or hydrogen atoms; L11 to L15 are linking groups; q is 0 or 1; when q is 0, R02 is an iodinated alkyl group or an iodine atom, and j2 is an integer of 1 to 5; when q is 1, one or more iodine atoms are included in both R01 and R02; and k1 and k2 are each 0 or 1. When q is 0, k2 is 1; when q is 1, k1 + k2 is equal to 1. Mm+ is an m-valent onium cation. This resist composition yields higher sensitivity during formation of a resist pattern and makes it possible to form a pattern having improved lithographic characteristics such as reduction in roughness.
Inventors:
SUZUKI ISSEI (JP)
FUJINO AKIYA (JP)
KOBAYASHI RYOTA (JP)
MATSUSHITA TETSUYA (JP)
NGUYEN KHANHTIN (JP)
FUJINAMI TETSUO (JP)
TODOROKI SEIJI (JP)
ADACHI YOHEI (JP)
FUJINO AKIYA (JP)
KOBAYASHI RYOTA (JP)
MATSUSHITA TETSUYA (JP)
NGUYEN KHANHTIN (JP)
FUJINAMI TETSUO (JP)
TODOROKI SEIJI (JP)
ADACHI YOHEI (JP)
Application Number:
PCT/JP2023/034311
Publication Date:
April 11, 2024
Filing Date:
September 21, 2023
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
International Classes:
G03F7/004; C07C57/60; C07C59/68; C07C59/70; C07C63/74; C07C65/28; C07C69/63; C07C69/65; C07C69/653; C07C69/773; C07C69/82; C07C69/84; C07C211/63; C07C229/56; C07C229/60; C07C233/55; C07C233/81; C07C271/02; C07C381/12; C08F212/14; C08F220/38; G03F7/039
Domestic Patent References:
| WO2022209733A1 | 2022-10-06 |
Foreign References:
| JP2022081416A | 2022-05-31 |
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
Download PDF: