Title:
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND
Document Type and Number:
WIPO Patent Application WO/2023/210520
Kind Code:
A1
Abstract:
Provided are: a resist composition having favorable sensitivity, roughness characteristics, and etching resistance; a resist pattern formation method; and a new compound that is useful as a resin component for said resist composition. The present invention employs a resist composition that generates an acid upon exposure to light and changes in solubility in developing solutions by the action of the acid, and includes a polymer compound having a constituent unit (a0) derived from a compound represented by general formula (a0-m0), as a resin component that changes in solubility in developing solutions by the action of an acid. In general formula (a0-m0), W01 is a polymerizable-group-containing group and W02 is an aromatic hydrocarbon group. Ra01 is a specific acid-dissociable group. Ra02 is an iodine atom or a bromine atom. n is an integer of 1 or greater.
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Inventors:
ONISHI KOSHI (JP)
Application Number:
PCT/JP2023/015874
Publication Date:
November 02, 2023
Filing Date:
April 21, 2023
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
International Classes:
G03F7/039; C07D409/04; C08F12/00; C08F20/10
Domestic Patent References:
| WO2021029395A1 | 2021-02-18 | |||
| WO2020137935A1 | 2020-07-02 |
Foreign References:
| JP2022042970A | 2022-03-15 | |||
| JP2023051837A | 2023-04-11 |
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
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