Title:
RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/043098
Kind Code:
A1
Abstract:
The present invention employs a resist composition containing: a base material component of which the solubility in a developing solution changes due to the action of an acid; and a compound represented by general formula (d0). In formula (d0), Mm+ is an m-valent organic cation. m is an integer of at least 1. Yd0 is a divalent linking group. Rpg is an acid-dissociable group represented by general formula (a0-pg). In formula (a0-pg), A is a cyclic alkene having only one carbon-carbon unsaturated bond in the ring skeleton thereof. Ra01 is a C1-C20 monovalent hydrocarbon group. I is an iodine atom. m1 is an integer of 0-20. m2 is an integer of 1-20. * is a bond that is bonded to -O-(oxy group) in -Yd0-CO-O-. According to this resist composition, high sensitivity is achieved when forming a resist pattern, and film reduction during development can be suppressed.
Inventors:
KATO HIROKI (JP)
UEHARA TAKUYA (JP)
UEHARA TAKUYA (JP)
Application Number:
PCT/JP2023/029109
Publication Date:
February 29, 2024
Filing Date:
August 09, 2023
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
International Classes:
G03F7/004; C07C69/757; C07C69/76; C07C69/83; C07C381/12; C07D333/76; G03F7/039
Domestic Patent References:
| WO2020246143A1 | 2020-12-10 |
Foreign References:
| JP2021080245A | 2021-05-27 | |||
| JP2017219836A | 2017-12-14 |
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
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