Title:
RESIST PATTERN FORMING METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/030316
Kind Code:
A1
Abstract:
Provided is a resist pattern forming method with which it is possible to form a fine resist pattern for which pattern collapse and development residue are suppressed. This resist pattern forming method includes: a step for coating a composition for forming a resist underlayer film on a base material containing silicon atoms in a surface layer thereof; a step for heating the coating film formed by the step for coating; a step for coating a composition for forming a resist film on the resist underlayer film formed by the step for heating; a step for exposing, to radiation, the resist film formed by the step for coating the composition for forming the resist film; and a step for developing the exposed resist film. The composition for forming the resist underlayer film has a polymer having a structural unit containing an alicyclic structure and a functional group which bonds to a silicon atom-containing group.
Inventors:
KOMATSU HIROYUKI (JP)
TAJI TOMOYA (JP)
FURUKAWA TAIICHI (JP)
SUZUKI JUNYA (JP)
TAJI TOMOYA (JP)
FURUKAWA TAIICHI (JP)
SUZUKI JUNYA (JP)
Application Number:
PCT/JP2021/027783
Publication Date:
February 10, 2022
Filing Date:
July 27, 2021
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C08F8/00; G03F7/11; G03F7/20; H01L21/027
Foreign References:
| JP2006227391A | 2006-08-31 | |||
| JP2015131958A | 2015-07-23 |
Attorney, Agent or Firm:
AMANO Kazunori (JP)
Download PDF: