Title:
RESIST POLYMER, RESIST COMPOSITION, METHOD FOR MANUFACTURE OF SUBSTRATE HAVING PATTERN FORMED THEREON, POLYMERIZABLE MONOMER, AND METHOD FOR PRODUCTION OF POLYMERIZABLE MONOMER
Document Type and Number:
WIPO Patent Application WO/2007/049593
Kind Code:
A1
Abstract:
[PROBLEMS] To provide a resist polymer which has a high sensitivity, a high resolution and a high light transmittance, produces little defects during image development, has a dry-etching property at such a level that the formation of a thin resist film can be achieved, shows a higher refractive index than that of a immersion solution when used in an immersion resist composition, and is excellent in copolymerizability with other monomers. [MEANS FOR SOLVING PROBLEMS] Disclosed is a resist polymer comprising a constitutional unit (A) having a naphthalene skeleton represented by the formula (1-1): wherein R10 represents a hydrogen atom or a methyl group; G represents -C(=O)-O-, -O- or -O-C(=O)-; L1 and L2 independently represent a single bond or a linear, branched or cyclic bivalent hydrocarbon group having 1 to 20 carbon atoms; and Y represents -C(=O)-OH, -OH, -C(=O)-OR13 or -OR13.
Inventors:
MOMOSE HIKARU (JP)
NAKAMURA TADASHI (JP)
KATO OSAMU (JP)
NAKAMURA TADASHI (JP)
KATO OSAMU (JP)
Application Number:
PCT/JP2006/321125
Publication Date:
May 03, 2007
Filing Date:
October 24, 2006
Export Citation:
Assignee:
MITSUBISHI RAYON CO (JP)
MOMOSE HIKARU (JP)
NAKAMURA TADASHI (JP)
KATO OSAMU (JP)
MOMOSE HIKARU (JP)
NAKAMURA TADASHI (JP)
KATO OSAMU (JP)
International Classes:
C08F20/30; C08F16/26; C08F18/04; G03F7/039
Foreign References:
| JP2004046098A | 2004-02-12 | |||
| JP2003076020A | 2003-03-14 | |||
| JP2002311585A | 2002-10-23 | |||
| JP2002169295A | 2002-06-14 | |||
| JP2002139836A | 2002-05-17 | |||
| JP2001174995A | 2001-06-29 |
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