Title:
RESIST UNDERLAYER FILM FORMATION COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2023/162653
Kind Code:
A1
Abstract:
[Problem] To provide a resist underlayer film formation composition having thermal resistance for use in a lithography process in semiconductor device production. [Solution] Provided is a resist underlayer film formation composition that includes a polymer having a unit structure represented by formula (I) or formula (I') (in formula (I) and formula (I'), n1, n2, and n3 are 0, ring A and ring B are benzene rings or naphthalene rings, and D represents a divalent organic group including a structure represented by formula (II) and/or (III)). Also provided is a semiconductor device production method that includes: a step for forming an underlayer film on a semiconductor substrate by means of the resist underlayer film formation composition; a step for forming a hardmask upon the film; a step for further forming a resist film upon the hardmask; a step for forming a resist pattern by means of light or electron beam irradiation and development; a step for etching the hardmask using the resist pattern; a step for etching the underlayer film using the patterned hardmask; and a step for processing the semiconductor substrate using the patterned underlayer film.
Inventors:
MITSUTAKE YUKI (JP)
TOKUNAGA HIKARU (JP)
TOKUNAGA HIKARU (JP)
Application Number:
PCT/JP2023/003846
Publication Date:
August 31, 2023
Filing Date:
February 06, 2023
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; C08G61/12; G03F7/26; G03F7/40; G03F7/42; H01L21/027
Domestic Patent References:
| WO2022030468A1 | 2022-02-10 | |||
| WO2013146670A1 | 2013-10-03 |
Foreign References:
| JP2021192074A | 2021-12-16 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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