Title:
RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN
Document Type and Number:
WIPO Patent Application WO/2008/069047
Kind Code:
A1
Abstract:
This invention provides a resist underlayer film forming composition for lithography, which, in order to prevent a resist pattern from collapsing after development involved in the fining of the resist pattern, is applied to a multilayer film process by a thin film resist, has a lower dry etching speed than resists and semiconductor substrates and has satisfactory etching resistance in relation to a substrate to be treated in the treatment of the substrate. The resist underlayer film forming composition for use in a lithographic process by a multilayer film contains a polymer having an aromatic fused ring-containing unit structure, a protected carboxyl group-containing unit structure, and an oxy ring-containing unit structure. There are also provided a method for pattern formation, using the resist underlayer film forming composition, and a method for manufacturing a semiconductor device, using the method for pattern formation.
Inventors:
SAKAGUCHI TAKAHIRO (JP)
ENOMOTO TOMOYUKI (JP)
SHINJO TETSUYA (JP)
ENOMOTO TOMOYUKI (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2007/072841
Publication Date:
June 12, 2008
Filing Date:
November 27, 2007
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
SAKAGUCHI TAKAHIRO (JP)
ENOMOTO TOMOYUKI (JP)
SHINJO TETSUYA (JP)
SAKAGUCHI TAKAHIRO (JP)
ENOMOTO TOMOYUKI (JP)
SHINJO TETSUYA (JP)
International Classes:
C08L25/00; C08F212/32; C08F226/12; C08F232/08; G03F7/11; G03F7/26
Foreign References:
| JP2002296789A | 2002-10-09 | |||
| JP2005250434A | 2005-09-15 | |||
| JPH06194842A | 1994-07-15 |
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (Shin-Ochanomizu Urban Trinity2, Kandasurugadai 3-chom, Chiyoda-ku Tokyo 62, JP)
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