Title:
RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NAPHTHALENE UNIT
Document Type and Number:
WIPO Patent Application WO/2022/196673
Kind Code:
A1
Abstract:
The present invention provides: a composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern, the method using this resist underlayer film-forming composition; and a method for producing a semiconductor device. The resist underlayer film-forming composition comprises a solvent and a product of reaction between compound (A) represented by formula (100) below (in formula (100), Ar1 and Ar2 each independently represent a C6–C40 aromatic ring that may be substituted, at least one of Ar1 and Ar2 is a naphthalene ring, L1 represents a single bond, a C1–C10 alkylene group that may be substituted, or a C2–C10 alkenylene group that may be substituted, T1 and T2 each independently represent a single bond, an ester bond or an ether bond, and E represents an epoxy group) and compound (B) containing at least two groups having reactivity with an epoxy group.
Inventors:
OGATA HIROTO (JP)
MIZUOCHI RYUTA (JP)
HIROHARA TOMOTADA (JP)
TAMURA MAMORU (JP)
MIZUOCHI RYUTA (JP)
HIROHARA TOMOTADA (JP)
TAMURA MAMORU (JP)
Application Number:
PCT/JP2022/011508
Publication Date:
September 22, 2022
Filing Date:
March 15, 2022
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; G03F7/20
Domestic Patent References:
| WO2011108365A1 | 2011-09-09 |
Foreign References:
| JP2019172846A | 2019-10-10 | |||
| JP2018173521A | 2018-11-08 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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