RESISTANCE CHANGE MEMORY

WIPO Patent Application WO/2013/137262

A1

Provided is a resistance change memory having a high on/off ratio. The resistance change memory of an embodiment comprises: a first electrode containing a first element; a resistance change layer formed on the first electrode and comprising an oxide of the first element; an oxygen-conducting layer which has been formed on the resistance change layer, comprises a second element and oxygen, has oxygen ion conductivity, and has a higher relative permittivity than the resistance change layer; and a second electrode formed on the oxygen-conducting layer. When the voltage between the first electrode and the second electrode is continuously raised from zero, the resistance change layer undergoes dielectric breakdown earlier than the oxygen-conducting layer.

KAKUSHIMA KUNIYUKI (JP)
DOU CHUMENG (JP)
AHMET PARHAT (JP)
IWAI HIROSHI (JP)
KATAOKA YOSHINORI (JP)

PCT/JP2013/056826

September 19, 2013

March 12, 2013

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TOKYO INST TECH (JP)
TOSHIBA MATERIALS CO LTD (JP)

H01L27/105; H01L45/00; H01L49/00

WO2010073897A1	2010-07-01
WO2011052239A1	2011-05-05

JP2011146111A	2011-07-28
JP2005285451A	2005-10-13
JP2011091325A	2011-05-06
JP2010028001A	2010-02-04
JP2010251352A	2010-11-04

H. Y. LEEL ET AL., TECHNICAL DIGEST OF INTERNATIONAL ELECTRON DEVICES MEETING (IEDM, 2008, pages 297 - 300
WANKI KIM ET AL., SYMPOSIUM ON VLSI TECHNOLOGY DIGEST OF TECHNICAL PAPERS, 2011, pages 22 - 23
See also references of EP 2827367A4

HYUGAJI, Masahiko et al. (JP)
Masahiko Hiugaji (JP)

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