Title:
RESISTANCE VARIABLE ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2018/123678
Kind Code:
A1
Abstract:
Provided is a metal-bridged-type resistance variable element in which a switching voltage and variations thereof are decreased, and which is suitable for high-density integration. The resistance variable element comprises: a metal precipitation-type resistance variable film; a first electrode which is in surface contact with a first surface of the resistance variable film in a predetermined first area, and which supplies metal ions via the first area; and a second electrode stacked on a second surface of the resistance variable film. The first area includes an area enclosed by a concave simple closed curve, or an area enclosed by each of a plurality of simple closed curves. The first electrode has an edge formed on a portion of the simple closed curve portion that includes both ends of a line segment passing a point outside the first area, the ends being present on the simple closed curve, the line segment having points outside the ends and in the vicinity of the ends.
Inventors:
TADA MUNEHIRO (JP)
Application Number:
PCT/JP2017/045263
Publication Date:
July 05, 2018
Filing Date:
December 18, 2017
Export Citation:
Assignee:
NEC CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| WO2014112365A1 | 2014-07-24 | |||
| WO2016084349A1 | 2016-06-02 | |||
| WO2013136798A1 | 2013-09-19 | |||
| WO2015182074A1 | 2015-12-03 |
Foreign References:
| JP2013187503A | 2013-09-19 | |||
| JP2013168454A | 2013-08-29 | |||
| JP2012244017A | 2012-12-10 |
Attorney, Agent or Firm:
SHIMOSAKA Naoki (JP)
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