RESISTIVE MEMORY DEVICE WITH MAGNETIC LAYER HAVING TOPOLOGICAL SPIN TEXTURES FOR TUNING

Title:

RESISTIVE MEMORY DEVICE WITH MAGNETIC LAYER HAVING TOPOLOGICAL SPIN TEXTURES FOR TUNING

Document Type and Number:

WIPO Patent Application WO/2022/233235

Kind Code:

A1

Abstract:

A resistive memory device includes a magnetic tunnel junction structure. The magnetic tunnel junction structure includes a free magnetic layer. The free magnetic layer includes a magnetic material configurable to host topological spin textures to tune a conductance state of the resistive memory device.

Inventors:

WOO SEONGHOON (US)
KIM SEYOUNG (US)
KANG MINGU (US)

Application Number:

PCT/CN2022/087835

Publication Date:

November 10, 2022

Filing Date:

April 20, 2022

Export Citation:

Click for automatic bibliography generation Help

Assignee:

IBM (US)
IBM CHINA CO LTD (CN)

International Classes:

H01L43/08

Foreign References:

CN111446361A	2020-07-24
US20200043981A1	2020-02-06
US20200212104A1	2020-07-02
CN112563411A	2021-03-26

Attorney, Agent or Firm:

LIU, SHEN & ASSOCIATES (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: STYLUS FIXING DETECTION APPARATUS AND SMART INTERACTIVE TABLET

Next Patent: SECURE DATA ANALYTICS