Title:
RESISTIVE SWITCHING MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/147073
Kind Code:
A1
Abstract:
In a resistive switching memory device provided with only two electrodes, use of the two electrodes is shared between both of cases where a resistance state is changed by the application of a control voltage, and where a drive voltage used for supplying a current or a signal is applied. Therefore, when a control voltage is applied, the trouble of having to temporarily disconnect the electrodes from a current line or a signal line arises. First to third electrodes (13 to 15) are provided to a resistive switching memory device (11). The first electrode (13) forms a Schottky barrier that can develop a rectifying property and a resistance changing characteristic in an interface (17) between the first electrode (13) and an oxide semiconductor (12). The third electrode (15) is made of a material that enables the third electrode (15) to make an Ohmic contact with the oxide semiconductor (12). A control voltage is applied between the first and second electrodes (13 and 14), and a drive voltage is applied between the first and third electrodes (13 and 15).
Inventors:
HIROSE SAKYO (JP)
Application Number:
PCT/JP2010/060019
Publication Date:
December 23, 2010
Filing Date:
June 14, 2010
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
HIROSE SAKYO (JP)
HIROSE SAKYO (JP)
International Classes:
H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
| WO2006101152A1 | 2006-09-28 |
Foreign References:
| JP2000236100A | 2000-08-29 | |||
| JP2009295941A | 2009-12-17 | |||
| JP2009283680A | 2009-12-03 | |||
| JP2010080490A | 2010-04-08 |
Attorney, Agent or Firm:
KOSHIBA, MASAAKI (JP)
Masaaki Koshiba (JP)
Masaaki Koshiba (JP)
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