Title:
REVERSE CONDUCTING IGBT POWER DEVICE AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/037186
Kind Code:
A1
Abstract:
Provided in the present application is an electronic device, comprising a reverse conducting IGBT power device. Further provided in the present application is a preparation method for a reverse conducting IGBT power device. The reverse conducting IGBT power device comprises at least one cell, wherein the cell comprises a first-conductivity-type electric field region; a front surface structure is formed on a front surface of the electric field region, and a collector electrode structure is formed on a back surface of the electric field region; the collector electrode structure comprises a first-conductivity-type first collector electrode layer, a second-conductivity-type second collector electrode layer, a collector electrode insertion layer, a collector electrode interconnection portion and a collector electrode; and the collector electrode insertion layer is located in the electric field region, and the collector electrode insertion layer is connected to the second collector electrode layer by means of the collector electrode interconnection portion.
Inventors:
CHANG LE (CN)
XU YUANBO (CN)
LU HANHAN (CN)
XU YUANBO (CN)
LU HANHAN (CN)
Application Number:
PCT/CN2023/102381
Publication Date:
February 22, 2024
Filing Date:
June 26, 2023
Export Citation:
Assignee:
BYD SEMICONDUCTOR COMPANY LTD (CN)
International Classes:
H01L29/417; H01L29/739
Foreign References:
| CN108649068A | 2018-10-12 | |||
| CN112466935A | 2021-03-09 | |||
| US20150249084A1 | 2015-09-03 | |||
| US20130264607A1 | 2013-10-10 |
Attorney, Agent or Firm:
JW&PARTNERS (CN)
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