Title:
RF-BIASED REACTIVE ION ETCHING APPARATUS, AND RF-BIASED REACTIVE ION ETCHING METHOD USING RF-BIASED REACTIVE ION ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/025168
Kind Code:
A1
Abstract:
In one embodiment of the present invention, provided are an RF-biased reactive ion etching apparatus for addressing the issue of affecting an etch profile that occurs during ion beam etching or reactive ion beam etching by forming a high-density plasma above an ion source unit in an etching chamber, forming a low-density plasma (40) below the ion source unit, and then adjusting the magnitude of a negative bias applied to a substrate to adjust the density of the low-density plasma (40), and an RF-biased reactive ion etching method using an RF-biased reactive ion etching apparatus.
Inventors:
YEOM GEUN YOUNG (KR)
KIM DOO SAN (KR)
KIM YE EUN (KR)
JANG YUN JONG (KR)
GIL HONG SEONG (KR)
KWON HAE IN (KR)
KIM DOO SAN (KR)
KIM YE EUN (KR)
JANG YUN JONG (KR)
GIL HONG SEONG (KR)
KWON HAE IN (KR)
Application Number:
PCT/KR2023/008983
Publication Date:
February 01, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
RESEARCH ＆ BUSINESS FOUNDATION SUNGKYUNKWAN UNIV (KR)
International Classes:
H01J37/32; H01J27/02; H01L21/67; H10N70/20
Foreign References:
| KR101234706B1 | 2013-02-19 | |||
| KR101529821B1 | 2015-06-29 | |||
| KR20110073676A | 2011-06-30 | |||
| KR20170126578A | 2017-11-20 | |||
| KR100724660B1 | 2007-06-04 |
Attorney, Agent or Firm:
HAN, Sang Soo (KR)
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