Title:
RINSING LIQUID FOR LITHOGRAPHY AND PATTERN FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2014/181748
Kind Code:
A1
Abstract:
A resist pattern that is free from pattern collapse, pattern defects, line width variation and pattern melting is formed by rinsing a fine resist pattern, which is obtained by exposing and developing a photosensitive resin, with use of a rinsing liquid for lithography containing a nonionic surfactant represented by formula (I) and water.
(In the formula, R1 and R2 may be the same or different and each represents a hydrogen atom or a methyl group; R3 and R4 may be the same or different and each represents a hydrogen atom, a methyl group or an ethyl group; R5 represents a hydrocarbon group having 2-5 carbon atoms and containing a double bond or a triple bond, or a phenylene group; and R6 and R7 may be the same or different and each represents a hydrogen atom or a methyl group.)
Inventors:
MATSUURA YURIKO (JP)
TSUYUKI SARA (JP)
NOYA GO (JP)
TSUYUKI SARA (JP)
NOYA GO (JP)
Application Number:
PCT/JP2014/062046
Publication Date:
November 13, 2014
Filing Date:
May 01, 2014
Export Citation:
Assignee:
AZ ELECTRONIC MATERIALS LUXEMBOURG SARL (LU)
International Classes:
G03F7/32; H01L21/027
Domestic Patent References:
| WO2006025303A1 | 2006-03-09 |
Foreign References:
| JPH10104840A | 1998-04-24 | |||
| JP2005043472A | 2005-02-17 | |||
| JP2012042531A | 2012-03-01 | |||
| JP2008180895A | 2008-08-07 | |||
| JP2004339226A | 2004-12-02 | |||
| JP2006030483A | 2006-02-02 | |||
| JP2014044298A | 2014-03-13 |
Attorney, Agent or Firm:
KANAO, Hiroki (JP)
鐘尾 Hiroki (JP)
鐘尾 Hiroki (JP)
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