Title:
ROUGH-SURFACE DIAMOND SYNTHESIS METHOD
Document Type and Number:
WIPO Patent Application WO/2016/054815
Kind Code:
A1
Abstract:
Provided is a rough-surface diamond synthesis method, particularly a method of manufacturing a conductive rough-surface black polycrystalline diamond, the method comprising the following steps: 1) crushing a mixed graphite with a catalyst powder of a standard HPHT process into a cylindrical shape such that the porosity thereof is less than 35%; 2) synthesizing a diamond by using a standard HPHT process; 3) when the growth of the diamond is completed and a relative pressure decreases near to 0, while maintaining a good contact between an anvil and a synthesized block, controlling the temperature to be from 800°C to 1200°C for 60-180 min, or, when the growth of the diamond is completed, taking out the HPHT-synthesized cylinder and placing the same in a vacuum furnace to heat at a temperature of from 800°C to 1200°C for 60-180 min; 4) taking out the synthesized cylinder, removing residual graphite and catalyst therefrom, rinsing with water, carrying out staged drying or sieving after drying to classify diamond grains according to different granularity meshes, thus obtaining rough-surface diamonds with different granularities.
Inventors:
CHEN ZHENG (US)
LI JIANLIN (CN)
LI SHUYUN (CN)
LI LI (CN)
LI JIANLIN (CN)
LI SHUYUN (CN)
LI LI (CN)
Application Number:
PCT/CN2014/088337
Publication Date:
April 14, 2016
Filing Date:
October 11, 2014
Export Citation:
Assignee:
HENAN FAMOUS DIAMOND IND CO LTD (CN)
International Classes:
B01J3/06; C01B31/06
Foreign References:
| CN103949187A | 2014-07-30 | |||
| CN87105216A | 1988-03-23 | |||
| US20100068524A1 | 2010-03-18 | |||
| CN101062472A | 2007-10-31 | |||
| US56089909A | 2009-09-16 |
Other References:
See also references of EP 3040116A4
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