Title:
SCANDIUM-CONTAINING III-N ETCH-STOP LAYERS FOR SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS
Document Type and Number:
WIPO Patent Application WO/2018/089579
Kind Code:
A3
Abstract:
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group Ill-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.
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Inventors:
HARDY MATTHEW (US)
DOWNEY BRIAN (US)
MAYER DAVID (US)
DOWNEY BRIAN (US)
MAYER DAVID (US)
Application Number:
PCT/US2017/060771
Publication Date:
July 26, 2018
Filing Date:
November 09, 2017
Export Citation:
Assignee:
THE GOVERMENT OF THE US SECRETARY OF THE NAVY (US)
International Classes:
H01L21/768; H01L21/3213
Domestic Patent References:
| WO2010013821A1 | 2010-02-04 |
Foreign References:
| US20130084441A1 | 2013-04-04 | |||
| US20120061683A1 | 2012-03-15 | |||
| US20150140710A1 | 2015-05-21 | |||
| US20090029555A1 | 2009-01-29 |
Other References:
See also references of EP 3539155A4
Attorney, Agent or Firm:
BROOME, Kerry, L. (US)
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