Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2022/181203
Kind Code:
A1
Abstract:
[Problem] To prevent dielectric breakdown of a Schottky barrier diode that uses a gallium oxide. [Solution] A Schottky barrier diode 11 comprises: a drift layer 30 provided on a semiconductor substrate 20; an anode electrode 40; and a cathode electrode 50. Portions of the anode electrode 40 are embedded in an outer peripheral trench 61 and central trenches 62 with an insulation film 63 interposed therebetween. The thickness of the insulation film 63 becomes thicker in the depth direction of the outer peripheral trench 61 approaching the outer side; and through this, the outer peripheral wall S1 of the anode electrode 40 embedded in the outer peripheral trench 61 has a curved shape that becomes closer to verticality approaching the outer side. As a result thereof, an electric field occurring in an outer peripheral bottom section of the outer peripheral trench 61 is relaxed when a reverse voltage is applied.
Inventors:
ARIMA JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
Application Number:
PCT/JP2022/003329
Publication Date:
September 01, 2022
Filing Date:
January 28, 2022
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/06; H01L29/24; H01L29/47; H01L29/872
Domestic Patent References:
| WO2020039971A1 | 2020-02-27 | |||
| WO2019082580A1 | 2019-05-02 | |||
| WO2020004437A1 | 2020-01-02 |
Foreign References:
| US20170301792A1 | 2017-10-19 | |||
| US20010000033A1 | 2001-03-15 | |||
| JP2018200919A | 2018-12-20 | |||
| JP2017199869A | 2017-11-02 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
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