Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2024/082636
Kind Code:
A1
Abstract:
The present invention provides a Schottky barrier diode, comprising: an ohmic electrode layer 4; a second semiconductor layer 32, wherein the lower surface of the second semiconductor layer 32 forms an ohmic contact with the upper surface of the ohmic electrode layer 4, and the second semiconductor layer 32 is an n-type semiconductor layer and comprises an SnO2 compound semiconductor material; a first semiconductor layer 31 which is an n-type semiconductor layer and comprises an SnO2 compound semiconductor material, wherein the electron carrier concentration of the first semiconductor layer 31 is less than or equal to 5×1017/cm3, and when a set reverse withstand voltage of the Schottky barrier diode is 10-10,000 V, the thickness is greater than or equal to 0.18 μm and is less than or equal to 112 μm, and the electron carrier concentration is lower than the electron carrier concentration of the second semiconductor layer 32; and a Schottky electrode layer 1, wherein the lower surface of the Schottky electrode layer 1 forms a Schottky contact with the upper surface of the second semiconductor layer 31. Compared with a Schottky diode made of an Si-based semiconductor material, the present invention can be applied to a higher reverse withstand voltage scenario and can suppress the increase of a forward voltage; and compared with a Schottky diode made of a SiC-based semiconductor material, the present invention can have lower costs while maintaining comparable device performance.
Inventors:
YIN XIANGYANG (CN)
XIE DIYIN (CN)
LI JING (CN)
XIE DIYIN (CN)
LI JING (CN)
Application Number:
PCT/CN2023/096765
Publication Date:
April 25, 2024
Filing Date:
May 29, 2023
Export Citation:
Assignee:
GUANGZHOU HUARUI SHENGYANG INVEST CO LTD (CN)
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/861
Attorney, Agent or Firm:
GUANGZHOU ZHIYOU PATENT & TRADEMARK AGENCY CO., LTD. (CN)
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