Title:
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR PRODUCING SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/176185
Kind Code:
A1
Abstract:
The purpose of the present invention is to achieve a low-cost epitaxial or green seed substrate for epitaxial growth, the seed substrate being formed of a group III nitride such as AlN, AlxGa1-xN (0 < X < 1) and GaN, while having high quality with less crystal defects. A seed substrate for epitaxial growth according to the present invention comprises a support substrate, a planarization layer that is arranged on the upper surface of the support substrate and has a thickness of 0.5 μm to 3 μm, and a seed crystal layer that is arranged on the upper surface of the planarization layer. The support substrate comprises: a composite ceramic core that is composed of a polycrystalline ceramic of a group III nitride and a fiber-like single crystal which is at least one group III or IV nitride or oxide; and a sealing layer which seals the core and has a thickness of 0.05 μm to 1.5 μm. The seed crystal layer is an Si <111> single crystal layer that has a thickness of 0.04 μm to 1.5 μm.
Inventors:
KUBOTA YOSHIHIRO (JP)
KAWAI MAKOTO (JP)
KAWAI MAKOTO (JP)
Application Number:
PCT/JP2023/003443
Publication Date:
September 21, 2023
Filing Date:
February 02, 2023
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C30B25/18; C30B29/38; H01L21/205
Domestic Patent References:
| WO2022070699A1 | 2022-04-07 |
Foreign References:
| JP2021502701A | 2021-01-28 | |||
| JP2006342410A | 2006-12-21 | |||
| JPH05195226A | 1993-08-03 |
Attorney, Agent or Firm:
ORISAKA Shigeki (JP)
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