Title:
SELECTIVE EMITTER PREPARATION METHOD, SOLAR CELL AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/068132
Kind Code:
A1
Abstract:
The present invention relates to the technical field of solar cells. Disclosed are a selective emitter preparation method, a solar cell and a preparation method therefor. The selective emitter preparation method comprises: obtaining an N-type silicon wafer, and depositing a mask layer on a front face thereof; forming a window at a position, corresponding to a metal gate line, of the mask layer; performing a diffusion treatment, so as to form a heavily doped region at the position corresponding to the window; removing the mask layer; and performing a diffusion treatment on the N-type silicon wafer after the mask layer is removed, so as to form a lightly doped region on the front face of the N-type silicon wafer after the mask layer is removed, so as to obtain a selective emitter. In the present application, a selective emitter is formed on a surface of an N-type silicon wafer by means of forming a mask layer and performing a diffusion treatment twice; and the sheet resistance of a heavily doped region is high, the contact resistance of a metal-semiconductor is low, the sheet resistance of a lightly doped region is low, the recombination efficiency is low, and the short-wave response is good, such that the efficiency of a solar cell is improved, no impurities are introduced throughout the entire preparation process, there is no need to additionally add other devices, and production is facilitated.
Inventors:
LIAO HUI (CN)
MA YUCHAO (CN)
CHEN PENG (CN)
SHAN WEI (CN)
HE SHENG (CN)
XU WEIZHI (CN)
MA YUCHAO (CN)
CHEN PENG (CN)
SHAN WEI (CN)
HE SHENG (CN)
XU WEIZHI (CN)
Application Number:
PCT/CN2021/074599
Publication Date:
April 07, 2022
Filing Date:
February 01, 2021
Export Citation:
Assignee:
CHINT SOLAR ZHEJIANG CO LTD (CN)
CHINT NEW ENERGY TECH HAINING CO LTD (CN)
CHINT NEW ENERGY TECH HAINING CO LTD (CN)
International Classes:
H01L31/18; H01L31/068
Domestic Patent References:
| WO2010150948A1 | 2010-12-29 |
Foreign References:
| CN112186074A | 2021-01-05 | |||
| CN102983214A | 2013-03-20 | |||
| CN101587919A | 2009-11-25 | |||
| CN101740661A | 2010-06-16 | |||
| CN210349847U | 2020-04-17 | |||
| CN111180555A | 2020-05-19 | |||
| KR20120122342A | 2012-11-07 |
Attorney, Agent or Firm:
HANGZHOU HANGCHENG PATENT ATTORNEY OFFICE CO., LTD. (CN)
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