SELECTIVE ETCH PROCESS FOR SILICON NITRIDE

WIPO Patent Application WO/2012/047459

A3

A method for selectively etching a substrate (25, 140, 150, 300, 310, 510) is described. The method includes preparing a substrate (25, 140, 150, 300, 310, 510) comprising a silicon nitride layer (180, 320) overlying a silicon-containing contact region (172, 343), and patterning the silicon nitride layer (180, 320) to expose the silicon-containing contact region (172, 343) using a plasma etching process in a plasma etching system (1, 1 a, 1 b, 1 c, 1 c', 1 d, 1 e, 1f). The plasma etching process uses a process composition having as incipient ingredients a process gas containing C, H and F, and a non-oxygen-containing additive gas, wherein the non-oxygen- containing additive gas includes H, or C, or both H and C, and excludes a halogen atom.

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METZ ANDREW W (US)
COTTLE HONGYUN (US)

PCT/US2011/051379

June 07, 2012

September 13, 2011

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TOKYO ELECTRON LTD (JP)
TOKYO ELECTRON AMERICA INC (US)
METZ ANDREW W (US)
COTTLE HONGYUN (US)

H01L21/311

US20060231522A1	2006-10-19
US6706640B1	2004-03-16
US4529476A	1985-07-16
US4857140A	1989-08-15
GB2333268A	1999-07-21
JP2000286241A	2000-10-13
US7557328B2	2009-07-07

NORSTROM H ET AL: "RIE of SiO2 in doped and undoped fluorocarbon plasmas", VACUUM, PERGAMON PRESS, GB, vol. 32, no. 12, 1 January 1982 (1982-01-01), pages 737 - 745, XP024735890, ISSN: 0042-207X, [retrieved on 19820101], DOI: 10.1016/0042-207X(82)93846-5

DAVIDSON, Kristi, L. et al. (Herron & Evans LLP,2700 Carew Tower,441 Vine Stree, Cincinnati OH, US)

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