Title:
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR, CHIP AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/045870
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and provides a semiconductor component and a manufacturing method therefor, a chip, and an electronic device, capable of increasing the thermal stability of a fin structure in a field effect transistor. The semiconductor component comprises a substrate, as well as a shallow trench isolation layer, a fin structure and an oxygen barrier layer which are disposed on the substrate. The fin structure comprises a bottom fin and a top fin, the shallow trench isolation layer being filled at a side surface of the bottom fin, the top fin protruding out of the shallow trench isolation layer, and two ends of the top fin in a length direction being used as a source region and a drain region of the semiconductor component, respectively. The oxygen barrier layer is located between the bottom fin and the shallow trench isolation layer, and the oxygen barrier layer covers the surface of the bottom fin.
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Inventors:
HUANG JINGYONG (CN)
ZHANG QIFEI (CN)
LI YANGYANG (CN)
ZHANG QIFEI (CN)
LI YANGYANG (CN)
Application Number:
PCT/CN2023/104504
Publication Date:
March 07, 2024
Filing Date:
June 30, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/088; H01L21/8234
Foreign References:
| CN107464840A | 2017-12-12 | |||
| CN107706112A | 2018-02-16 | |||
| CN107591362A | 2018-01-16 | |||
| CN107919284A | 2018-04-17 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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