Title:
SEMICONDUCTOR DEVICE AND COMPOSITE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/167015
Kind Code:
A1
Abstract:
The present invention provides a lateral field-effect transistor in which response performance is improved. In a lateral field-effect transistor (20), a block (17) is disposed closer to a gate terminal (7) than is a Zener diode (5).
Inventors:
KIHARA SEIICHIRO
Application Number:
PCT/JP2016/054482
Publication Date:
October 20, 2016
Filing Date:
February 16, 2016
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/06
Domestic Patent References:
| WO2015033631A1 | 2015-03-12 | |||
| WO2014196223A1 | 2014-12-11 |
Foreign References:
| JP2011067051A | 2011-03-31 | |||
| JP2013211548A | 2013-10-10 | |||
| JPH01276673A | 1989-11-07 | |||
| JPH1154747A | 1999-02-26 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation HARAKENZO WORLD PATENT & TRADEMARK (JP)
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