Title:
SEMICONDUCTOR DEVICE AND CRYSTAL GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2021/166917
Kind Code:
A1
Abstract:
In one embodiment, a semiconductor device of the present invention comprises at least a semiconductor layer having a corundum structure, and a first electrode and a second electrode each arranged on a first surface side of the semiconductor layer. The semiconductor device is configured such that electrical current flows in a first direction from the first electrode toward the second electrode. The m-axis direction of the semiconductor layer is parallel to the first direction. Additionally, in another embodiment, the semiconductor device is characterized by comprising at least a semiconductor layer having a corundum structure, a first electrode arranged on a first surface side of the semiconductor layer, and a second electrode arranged on a second surface side that faces opposite the first surface side. The first surface is the m surface, the second electrode is longer than the first electrode in at least the first direction, and the first direction is the c-axis direction of the semiconductor layer. As one example of an embodiment of a crystal growth method of the present invention, a crystal growth method includes growing a corundum-structured crystal on a c-surface of a crystal substrate for corundum-structured crystal growth, the crystal substrate being provided with an uneven section such that the displacement accompanying the crystal growth extends in the m-axis direction more than in the a-axis direction. Additionally, one example of an embodiment of the present invention is characterized by being a method for growing a corundum-structured crystal by using a crystal substrate for crystal growth, wherein an uneven section is provided on the crystal growth surface side of the crystal substrate such that displacement that expands in the m-axis direction of the crystal is moved from the direction of crystal growth.
Inventors:
KAWARA KATSUAKI (JP)
Application Number:
PCT/JP2021/005763
Publication Date:
August 26, 2021
Filing Date:
February 16, 2021
Export Citation:
Assignee:
FLOSFIA INC (JP)
International Classes:
C30B29/16; C23C16/02; C23C16/40; C30B25/18; C30B29/20; H01L21/336; H01L21/365; H01L21/368; H01L25/07; H01L25/18; H01L29/06; H01L29/12; H01L29/739; H01L29/78; H01L29/786; H01L29/872
Domestic Patent References:
| WO2020013261A1 | 2020-01-16 |
Foreign References:
| JP2016064961A | 2016-04-28 | |||
| JP2005276968A | 2005-10-06 | |||
| JP2019163200A | 2019-09-26 |
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