Title:
SEMICONDUCTOR DEVICE, DETECTION METHOD, ELECTRONIC APPARATUS, AND ELECTRONIC APPARATUS CONTROL METHOD
Document Type and Number:
WIPO Patent Application WO/2020/080429
Kind Code:
A1
Abstract:
The purpose of the present invention is to measure the influence of a plasma induced damage (PID) with higher accuracy using an oscillation circuit. A semiconductor device is provided with: at least one measuring transistor (111) of which the gate is electrically connected with an antenna section (140) functioning as an antenna during plasma processing; a selecting transistor (121) of which the source is electrically connected with the gate of the measuring transistor in parallel with the antenna section; and an oscillation circuit (130) which is electrically connected with the source of the measuring transistor and of which the oscillation frequency fluctuates due to a threshold voltage of the measuring transistor.
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Inventors:
MORI SHIGETAKA (JP)
TOMITA MANABU (JP)
TOMITA MANABU (JP)
Application Number:
PCT/JP2019/040741
Publication Date:
April 23, 2020
Filing Date:
October 16, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/822; G01R19/00; G01R31/26; H01L21/66; H01L27/04
Domestic Patent References:
| WO2018070260A1 | 2018-04-19 |
Foreign References:
| JP2017123422A | 2017-07-13 | |||
| JP2000150606A | 2000-05-30 | |||
| JP2016092076A | 2016-05-23 | |||
| JP2002313866A | 2002-10-25 | |||
| JP2001291753A | 2001-10-19 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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