Title:
SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2012/077682
Kind Code:
A1
Abstract:
A semiconductor device of the present invention is provided with: a gate electrode (62) and an oxygen supplying layer (64) of a thin film transistor (10), said gate electrode and oxygen supplying layer being formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode (62) and the oxygen supplying layer (64); an oxide semiconductor layer (68) of the thin film transistor (10), said oxide semiconductor layer being formed on the gate insulating layer (66); and a source electrode (70S) and a drain electrode (70d) of the thin film transistor (10), said source electrode and drain electrode being disposed on the gate insulating layer (66) and the oxide semiconductor layer (68).
Inventors:
MORIGUCHI MASAO
KANZAKI YOHSUKE
TAKANISHI YUDAI
KUSUMI TAKATSUGU
MATSUKIZONO HIROSHI
KANZAKI YOHSUKE
TAKANISHI YUDAI
KUSUMI TAKATSUGU
MATSUKIZONO HIROSHI
Application Number:
PCT/JP2011/078202
Publication Date:
June 14, 2012
Filing Date:
December 06, 2011
Export Citation:
Assignee:
SHARP KK (JP)
MORIGUCHI MASAO
KANZAKI YOHSUKE
TAKANISHI YUDAI
KUSUMI TAKATSUGU
MATSUKIZONO HIROSHI
MORIGUCHI MASAO
KANZAKI YOHSUKE
TAKANISHI YUDAI
KUSUMI TAKATSUGU
MATSUKIZONO HIROSHI
International Classes:
H01L29/786; G02F1/1368; H01L21/312; H01L21/336; H01L51/50
Foreign References:
| JP2009194208A | 2009-08-27 | |||
| JP2005210000A | 2005-08-04 | |||
| JP2004348144A | 2004-12-09 | |||
| JP2010219511A | 2010-09-30 | |||
| JP2010080952A | 2010-04-08 |
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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Claims:
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