Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/095433
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a semiconductor material layer forming a channel layer; a pair of source/drain electrodes formed on the semiconductor material layer; and a gate electrode that is disposed between the pair of source/drain electrodes and that is formed on the semiconductor material layer. The gate electrode and at least one of the pair of source/drain electrodes are connected with each other via a resistance element.
Inventors:
TAKEUCHI KATSUHIKO (JP)
Application Number:
PCT/JP2020/038905
Publication Date:
May 20, 2021
Filing Date:
October 15, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/336; H01L21/822; H01L21/337; H01L21/338; H01L27/04; H01L27/06; H01L29/778; H01L29/78; H01L29/786; H01L29/808; H01L29/812
Foreign References:
| JP2018067730A | 2018-04-26 | |||
| JPS61160963A | 1986-07-21 | |||
| JPS58123769A | 1983-07-23 | |||
| JP2007305747A | 2007-11-22 | |||
| JP2014078570A | 2014-05-01 | |||
| JP2017143127A | 2017-08-17 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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