Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/251081
Kind Code:
A1
Abstract:
This semiconductor device comprises, for instance, one or a plurality of first subcontacts that are electrically conductive with a substrate. At least one of the first subcontacts is formed in an element placement region on the substrate and has lower impedance than the substrate. At least one of the first subcontacts can be adjacent to a circuit element formed on the element placement region. An epitaxial layer of a second conductivity type is formed on the substrate, which is of a first conductivity type, and the first subcontact can include first wiring with lower impedance than the substrate and a semiconductor region of the first conductivity type that passes through the epitaxial layer and is conductive with the first wiring and the substrate.
Inventors:
TAKAGIWA SHUHEI (JP)
FURUTANI HIROSHI (JP)
SEIKE TAKESHI (JP)
FURUTANI HIROSHI (JP)
SEIKE TAKESHI (JP)
Application Number:
PCT/JP2021/018899
Publication Date:
December 16, 2021
Filing Date:
May 19, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/82; H01L27/04; H01L21/8222; H01L27/06; H01L27/118; H03F1/26; H03F3/45
Domestic Patent References:
| WO2019039245A1 | 2019-02-28 |
Foreign References:
| JP2002246553A | 2002-08-30 | |||
| JP2008193019A | 2008-08-21 | |||
| JP2012009841A | 2012-01-12 | |||
| JPH08115985A | 1996-05-07 | |||
| JP2008112857A | 2008-05-15 | |||
| JP2008071818A | 2008-03-27 | |||
| JP2000114461A | 2000-04-21 | |||
| JP2005039320A | 2005-02-10 | |||
| JP2020004935A | 2020-01-09 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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