Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/097520
Kind Code:
A1
Abstract:
The embodiments of the present application relate to the technical field of semiconductors. Provided are a semiconductor device and an electronic apparatus, which are used for reducing the gate-drain parasitic capacitance in a semiconductor device. The semiconductor device comprises: a substrate; a channel layer and a barrier layer, which are sequentially stacked on the substrate; a source electrode and a drain electrode, which are arranged on the barrier layer; a first gate electrode and a second gate electrode, which are arranged on the barrier layer, wherein the first gate electrode and the second gate electrode are located between the source electrode and the drain electrode, and the second gate electrode is arranged between the first gate electrode and the drain electrode; a first gate field plate, which is at least partially arranged on the side of the first gate electrode that is close to the drain electrode; and a first source field plate, which covers the first gate field plate.
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Inventors:
LE LINGCONG (CN)
ZHONG ZHENG (CN)
LI HAIJUN (CN)
HU HUILAN (CN)
MA PING (CN)
ZHONG ZHENG (CN)
LI HAIJUN (CN)
HU HUILAN (CN)
MA PING (CN)
Application Number:
PCT/CN2021/134648
Publication Date:
June 08, 2023
Filing Date:
November 30, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L29/40
Foreign References:
| CN105322005A | 2016-02-10 | |||
| CN103367403A | 2013-10-23 |
Other References:
ANDO Y., WAKEJIMA A., OKAMOTO Y., NAKAYAMA T., OTA K., YAMANOGUCHI K., MURASE Y., KASAHARA K., MATSUNAGA K., INOUE T., MIYAMOTO H.: "Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability", INTERNATIONAL ELECTRON DEVICES MEETING 5-7.12.2005, IEEE, IEEE, PISCATAWAY, NJ. USA, 5 December 2005 (2005-12-05), IEEE, Piscataway, NJ. USA , pages 576 - 579, XP010903543, ISBN: 978-0-7803-9268-7, DOI: 10.1109/IEDM.2005.1609412
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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